Ion current density and ion energy distributions at the electron cyclotron resonance position in the electron cyclotron resonance plasma

Seiji Samukawa, Yukito Nakagawa, Kei Ikeda

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Extremely highly selective phosphorus-doped polycrystalline silicon etching is achieved at the electron cyclotron resonance (ECR) position in a newly developed ECR plasma etching system. To characterize these etching results, the ion current density and the ion energy distribution in a ECR plasma are measured. Microwave power is absorbed completely at the ECR position. Therefore, the ECR position has maximum ion current density in an ECR plasma. Moreover, the mean ion energy and the width of ion energy distribution has minimum values at the ECR position. The ECR position in the ECR plasma can satisfy a high ion current density and a low ion energy at the same time. These characteristics correspond to the etching results.

本文言語English
ページ(範囲)423-447
ページ数25
ジャーナルJapanese journal of applied physics
30
2 R
DOI
出版ステータスPublished - 1991 2
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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