Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

Kanagasekaran Thangavel, P. Mythili, G. Bhagavannarayana, D. Kanjilal, R. Gopalakrishnan

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

本文言語English
ページ(範囲)2495-2502
ページ数8
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
267
15
DOI
出版ステータスPublished - 2009 8月 1

ASJC Scopus subject areas

  • 器械工学
  • 核物理学および高エネルギー物理学

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