Investigations of Cu filling in through-Si via holes using direct electroless plating on CVD-W

F. Inoue, M. Koyanagi, T. Fukushima, K. Yamamoto, S. Tanaka, Z. Wang, S. Shingubara

研究成果: Conference contribution

抄録

In order to realize low resistance through-Si via (TSV) electrodes, Cu electroplating is one of the most promising methods. However, with an increase of the aspect ratio of TSV, a formation of conductive seed layer prior to Cu electroplating is becoming more and more difficult. We propose an alternative approach using the electroless plating of Cu, which utilize displacement plating without catalyst. This method is effective for fabricating a low resistance TSV when combined with a barrier layer which is composed of tungsten (W). We found that an addition of Cl ions drastically suppressed the pinch-off at the entrance of the TSV, and it enabled conformal Cu deposition for high aspect ratio TSVs.

本文言語English
ホスト出版物のタイトルAdvanced Metallization Conference 2008, AMC 2008
ページ507-511
ページ数5
出版ステータスPublished - 2009
イベントAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
継続期間: 2008 9月 232008 9月 25

出版物シリーズ

名前Advanced Metallization Conference (AMC)
ISSN(印刷版)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
国/地域United States
CitySan Diego, CA
Period08/9/2308/9/25

ASJC Scopus subject areas

  • 材料科学(全般)
  • 産業および生産工学

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