Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

I. Ohkubo, Y. Matsumoto, A. Ohtomo, T. Ohnishi, A. Tsukazaki, M. Lippmaa, H. Koinuma, M. Kawasaki

研究成果: Conference article査読

60 被引用数 (Scopus)

抄録

Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.

本文言語English
ページ(範囲)514-519
ページ数6
ジャーナルApplied Surface Science
159
DOI
出版ステータスPublished - 2000 6
外部発表はい
イベント3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
継続期間: 1999 10 251999 10 29

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル