Epitaxial ZnO thin films were prepared on atomically flat sapphire (α-Al203) (0001) substrates at various substrate temperatures by laser molecular beam epitaxy. Crystal structure was analyzed by four-circle X-ray diffraction. Atomic force microscope (AFM) and reflection high energy electron diffraction (RHEED) were used to evaluate surface morphology. When ZnO was deposited on atomically flat sapphire (0001), an epitaxial ZnO film was grown with c-axis orientation, having two different in-plane orientation, ZnO [101̄0] ∥ sapphire [101̄0] (400-450 °C) and ZnO [101̄0] ∥ sapphire [112̄0] (800-835 °C), depending on deposition temperature. The detailed observation of the initial growth of ZnO film deposited at 835 °C revealed that the growth mode followed Stranski-Krastanov growth mechanism.
|ジャーナル||Applied Surface Science|
|出版ステータス||Published - 2000 6|
|イベント||3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn|
継続期間: 1999 10 25 → 1999 10 29
ASJC Scopus subject areas
- 化学 (全般)