Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication

Yongxun Liu, Shinya Kijima, Etsuro Sugimata, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Kunihiro Sakamoto, Toshihiro Sekigawa, Hiromi Yamauchi, Yoshifumi Takanashi, Eiichi Suzuki

研究成果: Article査読

103 被引用数 (Scopus)

抄録

The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering. It was found that the work function of the TiN (φTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, RN = N2/(Ar + N2) in the sputtering, from 17% to 100%. The experimental threshold voltage (Vth) dependence on the RN shows that the more RN offers the lower Vth for the TiN gate n-channel FinFETs. The composition analysis of the TiN films with different RN showed that the more amount of nitrogen is introduced into the TiN films with increasing RN, which suggests that the lowering of φTiN with increasing RN should be related to the increase in nitrogen concentration in the TiN film. The desirable Vth shift from -0.22 to 0.22 V was experimentally confirmed by fabricating n + poly-Si and TiN gate n-channel multi-FinFETs without a channel doping. The developed simple technique for the conformal TiN deposition on the sidewalls of Si-fin channels is very attractive to the TiN gate FinFET fabrication.

本文言語English
ページ(範囲)723-728
ページ数6
ジャーナルIEEE Transactions on Nanotechnology
5
6
DOI
出版ステータスPublished - 2006 11月
外部発表はい

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

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