Investigation of Piezoelectricity and Curie Temperature of Pb(Mg1/3, Nb2/3)O3-PbTiO3 Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling

Shinya Yoshida, Takumi Morimura, Kiyotaka Wasa, Shuji Tanaka

研究成果: Article査読

3 被引用数 (Scopus)


This paper reports on an abnormally high Curie temperature (Tc) of a Pb(Mg1/3, Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin film on Si prepared by sputter deposition with fast cooling. This deposition method was previously applied to Pb(Mn, Nb)O3-Pb(Zr, Ti)O3, and a c-axis-oriented epitaxial film with high Tc was obtained. Using the same method, a crack-free 2- μ m -thick PMN-PT thin film was epitaxially grown on a Si substrate covered with buffer layers. The piezoelectricity, |e31,f|, was as large as 1819 C/m2 under an electric field ranging from 25 to 75 kV/cm. The temperature characteristics of the dielectric constant and crystalline structure were significantly different from those of a bulk single crystal of PMN-PT, and suggested Tc higher than 500 °C. The enhanced Tc was possibly caused by thermally induced compressive strain received from the Si substrate. This approach can be an effective method for breaking the well-known tradeoff relationship between piezoelectricity and Tc of a piezoelectric thin film.

ジャーナルIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
出版ステータスPublished - 2018 9

ASJC Scopus subject areas

  • 器械工学
  • 音響学および超音波学
  • 電子工学および電気工学


「Investigation of Piezoelectricity and Curie Temperature of Pb(Mg<sub>1/3</sub>, Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。