抄録
We have investigated the fabrication processes and device characteristics for n-channel triple-gate metal-oxide-semi-conductor field-effect transistors (MOSFETs) on (100) silicon-on-insulator substrates. By optimizing the diagonal ion implantation conditions for the narrow fin channel, the fabricated triple-gate device showed an electron mobility almost compatible to a planar MOSFET with a supreme subthreshold slope of 64mV/decade and drain induced barrier lowering DIBL of 15 mV/V
本文言語 | English |
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ページ(範囲) | 3097-3100 |
ページ数 | 4 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 45 |
号 | 4 B |
DOI | |
出版ステータス | Published - 2006 4月 25 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)