Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

Kazuhiko Endo; Meishoku Masahara; Yongxun Liu; Takashi Matsukawa; Kenichi Ishii; Etsurou Sugimata; Hidenori Takashima; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1143/JJAP.45.3097

Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

Kazuhiko Endo, Meishoku Masahara, Yongxun Liu, Takashi Matsukawa, Kenichi Ishii, Etsurou Sugimata, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

We have investigated the fabrication processes and device characteristics for n-channel triple-gate metal-oxide-semi-conductor field-effect transistors (MOSFETs) on (100) silicon-on-insulator substrates. By optimizing the diagonal ion implantation conditions for the narrow fin channel, the fabricated triple-gate device showed an electron mobility almost compatible to a planar MOSFET with a supreme subthreshold slope of 64mV/decade and drain induced barrier lowering DIBL of 15 mV/V

本文言語	English
ページ（範囲）	3097-3100
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	45
号	4 B
DOI	https://doi.org/10.1143/JJAP.45.3097
出版ステータス	Published - 2006 4 25
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.45.3097

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引用スタイル

Endo, K., Masahara, M., Liu, Y., Matsukawa, T., Ishii, K., Sugimata, E., Takashima, H., Yamauchi, H., & Suzuki, E. (2006). Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3097-3100. https://doi.org/10.1143/JJAP.45.3097

Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate. / Endo, Kazuhiko; Masahara, Meishoku; Liu, Yongxun; Matsukawa, Takashi; Ishii, Kenichi; Sugimata, Etsurou; Takashima, Hidenori; Yamauchi, Hiromi; Suzuki, Eiichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3097-3100.

研究成果: Article › 査読

Endo, K, Masahara, M, Liu, Y, Matsukawa, T, Ishii, K, Sugimata, E, Takashima, H, Yamauchi, H & Suzuki, E 2006, 'Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3097-3100. https://doi.org/10.1143/JJAP.45.3097

Endo, Kazuhiko ; Masahara, Meishoku ; Liu, Yongxun ; Matsukawa, Takashi ; Ishii, Kenichi ; Sugimata, Etsurou ; Takashima, Hidenori ; Yamauchi, Hiromi ; Suzuki, Eiichi. / Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3097-3100.

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