Investigation of domain structure and electrical properties of monoclinic epitaxial zirconia buffer layer

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

研究成果: Article査読

抄録

Epitaxial ZrO2 buffer layers of monoclinic phase have been grow on p-Si(001) wafers. The thickness of the buffer layer is 17nm and 3nm. Wide angle X-ray reciprocal space mapping and high resolution transmission electron microscope (HRTEM) analysis have shown that many ferroelastic 90° and 180° domains, of which 001 plane align nearly in out-of plane direction for 17nm ZrO2 buffer layer, and that nano-sized monoclinic phase has coherently precipitated in tetragonal matrix for 3nm ZiO2 buffer layer. Capacitance-Voltage (C-V) measurement has shown that the C-V curve of ZrO2 buffer layer showed charge-injection type hysteresis. The width has been 26mV for 17nm ZrO2 buffer layer and 2mV for 3nm ZrO 2 buffer layer, which correspond to the density of oxide-trapped charge of 2.4×1011cm-2and 2.8×10 11cm-2, respectively. The density of interface-trapped charge has been 2×1011cm-2 · eV -1, and 9.7×1010cm-2 · eV -1,respectively.

本文言語English
ページ(範囲)261-264
ページ数4
ジャーナルKey Engineering Materials
301
DOI
出版ステータスPublished - 2006 1月 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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