Investigation of carrier recombination process in top-down fabricated GaAs nano-disc array structure by photoluminescence measurements

T. Ikari, D. Ohori, A. Higo, C. Thomas, S. Samukawa, K. Nishioka, A. Fukuyama

研究成果: Conference contribution

抄録

This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of the top-down process toward a defect-free ND fabrication. Strong luminescence was observed even in an as-etched samples.

本文言語English
ホスト出版物のタイトルNanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509043521
DOI
出版ステータスPublished - 2016 12 7
イベント11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016 - Toulouse, France
継続期間: 2016 10 92016 10 12

出版物シリーズ

名前Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings

Other

Other11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016
CountryFrance
CityToulouse
Period16/10/916/10/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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