TY - GEN
T1 - Investigation of carrier recombination process in top-down fabricated GaAs nano-disc array structure by photoluminescence measurements
AU - Ikari, T.
AU - Ohori, D.
AU - Higo, A.
AU - Thomas, C.
AU - Samukawa, S.
AU - Nishioka, K.
AU - Fukuyama, A.
PY - 2016/12/7
Y1 - 2016/12/7
N2 - This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of the top-down process toward a defect-free ND fabrication. Strong luminescence was observed even in an as-etched samples.
AB - This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of the top-down process toward a defect-free ND fabrication. Strong luminescence was observed even in an as-etched samples.
UR - http://www.scopus.com/inward/record.url?scp=85010471682&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010471682&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2016.7777077
DO - 10.1109/NMDC.2016.7777077
M3 - Conference contribution
AN - SCOPUS:85010471682
T3 - Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
BT - Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016
Y2 - 9 October 2016 through 12 October 2016
ER -