INVESTIGATION AND REDUCTION OF HOT ELECTRON INDUCED PUNCHTHROUGH (HEIP) EFFECT IN SUBMICRON PMOSFETS.

M. Koyanagi, A. G. Lewis, J. Zhu, R. A. Martin, T. Y. Huang, J. Y. Chen

研究成果: Conference article

38 引用 (Scopus)

抜粋

Hot carrier reliability in submicrometer PMOSFETs has been investigated. The punch-through voltage is seriously reduced due to hot electron induced punch-through (HEIP) in submicrometer PMOSFETs. In order to mitigate the HEIP effect, a lightly doped drain (LDD) PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0. 8 mu m at the worst case supply voltage (5. 5 V).

元の言語English
ページ(範囲)722-725
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
DOI
出版物ステータスPublished - 1986 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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