Hot carrier reliability in submicrometer PMOSFETs has been investigated. The punch-through voltage is seriously reduced due to hot electron induced punch-through (HEIP) in submicrometer PMOSFETs. In order to mitigate the HEIP effect, a lightly doped drain (LDD) PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0. 8 mu m at the worst case supply voltage (5. 5 V).
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版物ステータス||Published - 1986 1 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry