Investigation about I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact

Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

研究成果: Conference contribution

抄録

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.

本文言語English
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
出版社Trans Tech Publications Ltd
ページ43-47
ページ数5
ISBN(印刷版)9783037850510
DOI
出版ステータスPublished - 2011

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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