Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

K. Yamane; K. Yakushiji; F. Ernult; M. Matsuura; S. Mitani; K. Takanashi; H. Fujimori

doi:10.1016/j.jmmm.2003.12.173

Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

K. Yamane, K. Yakushiji, F. Ernult, M. Matsuura, S. Mitani, K. Takanashi, H. Fujimori

金属材料研究所・先端エネルギー材料理工共創研究センター

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

We have investigated spin-dependent single-electron tunneling (SET) in micro-fabricated magnetic granular systems with current-perpendicular-to-plane geometry. Electron beam lithography technique and Ar ion etching were employed for the micro-fabrication process to form a Co/Al-O/Co₃₁Al ₂₄O₄₅/Co/Pt pillar with the cross section of 0.4 × 0.4 μm². Inverse tunnel magnetoresistance is observed around the step-up points of Coulomb staircases. The observed results are beyond the orthodox theory of SET for a double junction model without spin-accumulation effects.

本文言語	English
ページ（範囲）	e1091-e1093
ジャーナル	Journal of Magnetism and Magnetic Materials
巻	272-276
号	SUPPL. 1
DOI	https://doi.org/10.1016/j.jmmm.2003.12.173
出版ステータス	Published - 2004 5月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1016/j.jmmm.2003.12.173

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@article{370893a74cf34f599c5bd8f71af97366,

title = "Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems",

abstract = "We have investigated spin-dependent single-electron tunneling (SET) in micro-fabricated magnetic granular systems with current-perpendicular-to-plane geometry. Electron beam lithography technique and Ar ion etching were employed for the micro-fabrication process to form a Co/Al-O/Co31Al 24O45/Co/Pt pillar with the cross section of 0.4 × 0.4 μm2. Inverse tunnel magnetoresistance is observed around the step-up points of Coulomb staircases. The observed results are beyond the orthodox theory of SET for a double junction model without spin-accumulation effects.",

keywords = "Coulomb blockade, Coulomb staircase, Electron beam lithography, Granular film, Inverse tunnel magnetoresistance, MRAM, Single-electron tunneling",

author = "K. Yamane and K. Yakushiji and F. Ernult and M. Matsuura and S. Mitani and K. Takanashi and H. Fujimori",

note = "Funding Information: The authors thank H. Imamura, S. Takahashi and S. Maekawa, Tohoku University, for their theoretical support. F. E. thanks JSPS for the financial support. ",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.173",

language = "English",

volume = "272-276",

pages = "e1091--e1093",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

AU - Yamane, K.

AU - Yakushiji, K.

AU - Ernult, F.

AU - Matsuura, M.

AU - Mitani, S.

AU - Takanashi, K.

AU - Fujimori, H.

N1 - Funding Information: The authors thank H. Imamura, S. Takahashi and S. Maekawa, Tohoku University, for their theoretical support. F. E. thanks JSPS for the financial support.

PY - 2004/5

Y1 - 2004/5

N2 - We have investigated spin-dependent single-electron tunneling (SET) in micro-fabricated magnetic granular systems with current-perpendicular-to-plane geometry. Electron beam lithography technique and Ar ion etching were employed for the micro-fabrication process to form a Co/Al-O/Co31Al 24O45/Co/Pt pillar with the cross section of 0.4 × 0.4 μm2. Inverse tunnel magnetoresistance is observed around the step-up points of Coulomb staircases. The observed results are beyond the orthodox theory of SET for a double junction model without spin-accumulation effects.

AB - We have investigated spin-dependent single-electron tunneling (SET) in micro-fabricated magnetic granular systems with current-perpendicular-to-plane geometry. Electron beam lithography technique and Ar ion etching were employed for the micro-fabrication process to form a Co/Al-O/Co31Al 24O45/Co/Pt pillar with the cross section of 0.4 × 0.4 μm2. Inverse tunnel magnetoresistance is observed around the step-up points of Coulomb staircases. The observed results are beyond the orthodox theory of SET for a double junction model without spin-accumulation effects.

KW - Coulomb blockade

KW - Coulomb staircase

KW - Electron beam lithography

KW - Granular film

KW - Inverse tunnel magnetoresistance

KW - MRAM

KW - Single-electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=23144447799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23144447799&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.173

DO - 10.1016/j.jmmm.2003.12.173

M3 - Article

AN - SCOPUS:23144447799

VL - 272-276

SP - e1091-e1093

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - SUPPL. 1

ER -

Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

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ASJC Scopus subject areas

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