Inverse spin Hall effect in Pt/(Ga,Mn)As

H. Nakayama, L. Chen, H. W. Chang, H. Ohno, F. Matsukura

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 1019m-2, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

本文言語English
論文番号222405
ジャーナルApplied Physics Letters
106
22
DOI
出版ステータスPublished - 2015 6 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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