Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

T. Watanabe; T. Takahashi; S. Suzuki; S. Sato; H. Katayama-Yoshida

doi:10.1103/PhysRevB.44.5316

Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

T. Watanabe, T. Takahashi, S. Suzuki, S. Sato, H. Katayama-Yoshida

材料科学高等研究所

研究成果: Article › 査読

24 被引用数 (Scopus)

抄録

Inverse-photoemission spectroscopy has been performed on Bi2Sr2Ca1-xYxCu2O8 ceramics, where hole concentration is controlled by the atomic ratio between divalent Ca and trivalent Y atoms. It was found that hole doping does not cause a rigid shift of the density of states relative to the Fermi level, but creates additional electronic states in the vicinity of the Fermi level.

本文言語	English
ページ（範囲）	5316-5317
ページ数	2
ジャーナル	Physical Review B
巻	44
号	10
DOI	https://doi.org/10.1103/PhysRevB.44.5316
出版ステータス	Published - 1991

ASJC Scopus subject areas

凝縮系物理学

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10.1103/PhysRevB.44.5316

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abstract = "Inverse-photoemission spectroscopy has been performed on Bi2Sr2Ca1-xYxCu2O8 ceramics, where hole concentration is controlled by the atomic ratio between divalent Ca and trivalent Y atoms. It was found that hole doping does not cause a rigid shift of the density of states relative to the Fermi level, but creates additional electronic states in the vicinity of the Fermi level.",

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AU - Sato, S.

AU - Katayama-Yoshida, H.

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Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

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