Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Yukinori Morita, Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Shinji Migita, Kazuhiko Endo, Shin Ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota

研究成果: Article査読

21 被引用数 (Scopus)

抄録

A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

本文言語English
論文番号04EB06
ジャーナルJapanese journal of applied physics
55
4
DOI
出版ステータスPublished - 2016 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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