Intra-and inter-chip electrical interconnection formed by directed self assembly of nanocomposite containing diblock copolymer and nanometal

M. Murugesan, T. Fukushima, J. C. Bea, H. Hashimoto, M. Koyanagi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Advanced directed-self-assembly (DSA) has been deployed to form vertical cylindrical structures inside deep Si trenches and via with the cylinders' width at nm-scale for making electrical interconnection in the vertically stacked 3D-LSIs/ICs. DSA reaction for PS(57k)-b-PMMA(25k) diblock copolymer (DBC) with PS:PMMA ratio as 2:1 have resulted into the formation of 20 nm-width nano-cylinders (NC) running parallel and straight up to > 7 μm inside the 10 μm-deep Si trenches. Upon increasing the molecular weight of PS from 57k to 140k (keeping the ratio of DBC as 2:1), the width of NC has enlarged from 20 nm to > 80 nm. A ∼100 nm-width metal interconnects were formed inside the ∼500 nm-width via of the bonded 3D-ICs, for Sn and In metals. Based on Self Consistent Field theory, both 2D & 3D simulation results showed that the metal particles attached to PMMA of DBC are connected vertically and forms cylinder, as long as the metal particles are well attached to PMMA.

本文言語English
ホスト出版物のタイトル2018 IEEE International Reliability Physics Symposium, IRPS 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ4D.21-4D.27
ISBN(電子版)9781538654798
DOI
出版ステータスPublished - 2018 5 25
イベント2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
継続期間: 2018 3 112018 3 15

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2018-March
ISSN(印刷版)1541-7026

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
国/地域United States
CityBurlingame
Period18/3/1118/3/15

ASJC Scopus subject areas

  • 工学(全般)

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