Internal photoemission spectroscopy measurement of Alq3/cathode interface by three layered electron only device

Eiji Itoh, Shinya Takaishi, Keiichi Miyairi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We have investigated the Schottky barrier height for electrons at aluminum tris (8-hydroxyquinoline) (Alq3)/cathode interfaces by internal photoemission (IPE) measurement. A three layered device consisting of ITO/TiO2/intermediate layer (IL)/Alq3/cathode structure was used to fabricate the "electron-only device" and to reduce the equivalent thickness of TiO2 and IL stack. The measured barrier heights were 0.86, 1.05, 1.3 and 1.55 eV for MgAg, Al, Ag and Au electrodes, and it gradually decreased with external voltage and it was explained as Schottky effect. Barrier height showed linear relationship with work-function and electronegativity of cathode materials. The slope parameter of 0.6 with electronegativity was attributed to the interfacial charge transfer through the metal-induced gap states at the cathode/Alq3 interface.

本文言語English
ページ(範囲)791-794
ページ数4
ジャーナルThin Solid Films
518
2
DOI
出版ステータスPublished - 2009 11 30
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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