Interfacial reactions in Ru metal-electrode/HfSiON gate stack structures studied by synchrotron-radiation photoelectron spectroscopy

H. Kamada, S. Toyoda, T. Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, T. Sukegawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have investigated the thermal stability and interfacial reactions of a Ru/HfSiON gate stack structure, annealed in a nitrogen ambient, using synchrotron-radiation photoelectron spectroscopy. We find that in HfSiON films with Ru metal, competition between catalyst-induced oxidation and oxygen or SiO desorption arises upon high-temperature annealing, unlike in the same films without Ru. The desorption reaction during high-temperature annealing at 1050 °C could be caused by the decomposition of an unstable Si oxide component, formed by catalytic oxidation at the interface between the HfSiON layer and the Si substrate after annealing below 850 °C.

本文言語English
論文番号123521
ジャーナルJournal of Applied Physics
108
12
DOI
出版ステータスPublished - 2010 12 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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