TY - JOUR
T1 - Interfacial reaction between Cu substrates and Zn-Al base high-temperature Pb-free solders
AU - Takaku, Yoshikazu
AU - Felicia, Lazuardi
AU - Ohnuma, Ikuo
AU - Kainuma, Ryosuke
AU - Ishida, Kiyohito
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2008/3
Y1 - 2008/3
N2 - Chemical reactions between Cu substrates and Zn-Al high-temperature solder alloys, Zn-4Al and Zn-4Al-1Cu (mass%), at temperatures ranging from 420°C to 530°C were experimentally investigated by a scanning electron microscope using backscattered electrons (SEM-BSE) and an electron probe microanalyzer (EPMA). Intermediate phases (IMPs), β(A2) or β(B2), γ(D8 2), and ε(A3) phases formed and grew during the soldering and aging treatments. The consumption rate of the IMP for Cu substrates is described by the square root of t in both the alloys, while the additional Cu in the molten Zn-Al alloy slightly suppresses the consumption of Cu substrates. The growth of IMPs during soldering treatment is controlled by the volume diffusion of constituent elements, and its activation energy increases in the order of Q ε < Q γ < Q β. In view of the aging process, the growth of IMPs is considered to be controlled by the volume diffusion. In particular, the layer thickness of γ rapidly grows over 200°C, although the thickness of the β layer grows very slowly.
AB - Chemical reactions between Cu substrates and Zn-Al high-temperature solder alloys, Zn-4Al and Zn-4Al-1Cu (mass%), at temperatures ranging from 420°C to 530°C were experimentally investigated by a scanning electron microscope using backscattered electrons (SEM-BSE) and an electron probe microanalyzer (EPMA). Intermediate phases (IMPs), β(A2) or β(B2), γ(D8 2), and ε(A3) phases formed and grew during the soldering and aging treatments. The consumption rate of the IMP for Cu substrates is described by the square root of t in both the alloys, while the additional Cu in the molten Zn-Al alloy slightly suppresses the consumption of Cu substrates. The growth of IMPs during soldering treatment is controlled by the volume diffusion of constituent elements, and its activation energy increases in the order of Q ε < Q γ < Q β. In view of the aging process, the growth of IMPs is considered to be controlled by the volume diffusion. In particular, the layer thickness of γ rapidly grows over 200°C, although the thickness of the β layer grows very slowly.
KW - Cu
KW - Intermediate phases (IMP)
KW - Reaction
KW - Solder
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U2 - 10.1007/s11664-007-0344-9
DO - 10.1007/s11664-007-0344-9
M3 - Article
AN - SCOPUS:38349129855
VL - 37
SP - 314
EP - 323
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 3
ER -