Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate

Hiroyuki Sasaki, Yutaka Wakayama, Toyohiro Chikyow, Masaki Imamura, Akinori Tanaka, Kenji Kobayashi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.

本文言語English
ページ(範囲)153-156
ページ数4
ジャーナルSolid State Communications
139
4
DOI
出版ステータスPublished - 2006 7月 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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