TY - JOUR
T1 - Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate
AU - Sasaki, Hiroyuki
AU - Wakayama, Yutaka
AU - Chikyow, Toyohiro
AU - Imamura, Masaki
AU - Tanaka, Akinori
AU - Kobayashi, Kenji
PY - 2006/7/1
Y1 - 2006/7/1
N2 - The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.
AB - The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.
KW - A. Organic semiconductors
KW - A. Surfaces and interfaces
KW - D. Electronic states
KW - E. Photoelectron spectroscopies
UR - http://www.scopus.com/inward/record.url?scp=33745968530&partnerID=8YFLogxK
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U2 - 10.1016/j.ssc.2006.05.039
DO - 10.1016/j.ssc.2006.05.039
M3 - Article
AN - SCOPUS:33745968530
VL - 139
SP - 153
EP - 156
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 4
ER -