Interface structure of InGaAs wafers bonded using thin amorphous Ge films in vacuum

Miyuki Uomoto, Yuki Yamada, Takuya Hoshi, Masahiro Nada, Takehito Shimatsu

研究成果: Article査読

3 被引用数 (Scopus)

抄録

This study examines room-temperature bonding of InGaAs wafers in vacuum using thin amorphous Ge (a-Ge) films. InGaAs wafers bonded using 0.5-1-nm-thick a-Ge film on respective sides show great bonding strength comparable to the fracture strength of InGaAs after annealing at 340 °C. High-resolution images obtained using transmission electron microscopy show no vacancy at the bonded a-Ge/a-Ge interface and no clear damage of the deposited a-Ge films on the crystal lattices of the InGaAs surfaces. Analysis using electron energy-loss spectroscopy reveals a slight inter-diffusion of Ge and In at the a-Ge/InGaAs interface.

本文言語English
論文番号02BA03
ジャーナルJapanese journal of applied physics
57
2
DOI
出版ステータスPublished - 2018 2

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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