Interface Fermi level pinning in a Cu/p-CuGaS2 Schottky diode

M. Sugiyama, R. Nakai, H. Nakanishi, Sf Chichibu

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A Schottky contact to p-type CuGaS2 that showed the highest rectification ratio of approximately 500 ever reported was realized using a Cu electrode on a HF/HNO3-treated surface, as well as an excellent Au ohmic contact on a HF-etched surface. The effective Schottky barrier height of 0.9 eV was obtained from the current-voltage and capacitance-voltage characteristics. The value was smaller by 1.1 eV than that calculated from the values of the work function of Cu and electron affinity of CuGaS2. The results indicated a surface pinning of the Fermi level to certain acceptor-type gap states below the midgap.

本文言語English
ページ(範囲)1787-1790
ページ数4
ジャーナルJournal of Physics and Chemistry of Solids
64
9-10
DOI
出版ステータスPublished - 2003 9
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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