Interface engineering for the passivation of c-Si with O 3-based atomic layer deposited AlO x for solar cell application

Hyunju Lee, Tomihisa Tachibana, Norihiro Ikeno, Hiroki Hashiguchi, Koji Arafune, Haruhiko Yoshida, Shin Ichi Satoh, Toyohiro Chikyow, Atsushi Ogura

研究成果: Article査読

28 被引用数 (Scopus)

抄録

We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlO x films deposited by O 3-based atomic layer deposition for crystalline Si. We found that the dramatic enhancement in the passivation performance of room-temperature deposited AlO x films by post-annealing is due to the phase transformation of aluminum silicate to mullite in an AlO x interlayer and the resulting self-aligned AlO x/SiO x interface. This result is interesting for the fabrication of high-performance silicon solar cells with AlO x passivation layers.

本文言語English
論文番号143901
ジャーナルApplied Physics Letters
100
14
DOI
出版ステータスPublished - 2012 4 2
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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