Interface engineering for improving optical switching in a diarylethene-channel transistor

Ryoma Hayakawa, Matthieu Petit, Kenji Higashiguchi, Kenji Matsuda, Toyohiro Chikyow, Yutaka Wakayama

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Photochromic diarylethene (DAE) molecules were employed as the channel layer of a field-effect transistor, where the drain current was effectively modulated by the reversible phase transition between a semiconductor (closed-ring) and an insulator (open-ring) under ultraviolet or visible light irradiation. Our goal was the further improvement of optical switching properties by interface engineering. First, we reduced the hole injection barrier by introducing an α-sexithiophene (6T) thin film at the interface between the source-drain electrodes and the DAE channel layer. As a result, the threshold voltage of the DAE-FETs was greatly reduced from-64 to-4 V. Second, we improved the optical switching performance by the surface treatment of a SiO2 gate insulator with poly(methyl methacrylate) (PMMA). The drain current was unchanged even after 10 cycles of optical switching in contrast to the rapid degradation found with untreated DAE transistors. The combination of these improvements and interdigitated source-drain electrodes eventually resulted in a light irradiation driven on/off ratio of over 103. Significantly, the light-induced on/off ratio was comparable to that driven by an electrical field, which satisfies the requirement for industrial optical applications. Our findings will provide useful ways of realizing high-performance optical switching transistors.

本文言語English
ページ(範囲)149-154
ページ数6
ジャーナルOrganic Electronics
21
DOI
出版ステータスPublished - 2015 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 生体材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学
  • 電子工学および電気工学

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