Interface control of advanced electronic devices -High-k/metal gate system and magnetic tunneling junction

M. Niwa, S. Sato, T. Endoh

研究成果: Conference contribution

抄録

Key issues on interface control of the constituent materials are taken up and reviewed with respect to scaled logic and memory. For logic devices with high-k/metal gate, amount of oxygen vacancy in the high-k dielectric determines the effective workfunction by modulating the workfunction derived from the high-k/metal gate materials. Concerning the EOT control of HfO2, by controlling the oxidation time of pre-deposited metal-Hf, precise thickness control of the interfacial layer including no interface layer with excellent uniformity is achieved. In the meantime, for a magnetic tunnel junction (MTJ) for spin-transfer-torque switching, a redox reaction is found to occur at the surface of Ta/CoFeB/MgO/CoFeB where the oxidized cobalt and iron are reduced by the boron atoms that diffuse toward the top CoFeB surface. It is imperative to protect the MTJ surface from oxidation/ hydroxylation to obtain an accurate tunnel current.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者Durga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
出版社Electrochemical Society Inc.
ページ133-145
ページ数13
1
ISBN(電子版)9781607688181
ISBN(印刷版)9781623324704
DOI
出版ステータスPublished - 2017
イベント15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
継続期間: 2017 10 12017 10 5

出版物シリーズ

名前ECS Transactions
番号1
80
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
国/地域United States
CityNational Harbor
Period17/10/117/10/5

ASJC Scopus subject areas

  • 工学(全般)

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