Interface characterization of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

X. L. Ma, N. Shibata, Y. Ikuhara

    研究成果: Article査読

    15 被引用数 (Scopus)

    抄録

    The AlN/TiN/MgO(001) interfaces, prepared by molecular beam epitaxy, have been characterized by cross-sectional high-resolution electron microscopy (HREM). The thin TiN buffer layer, with the thickness of 40 nm, is epitaxially grown on the MgO(001) substrate. Owing to the same structure-type as well as the small mismatch of their lattice parameters, the growth is governed by the parallel orientation relationship of (001)TiN∥(001)MgO, (010)TiN∥(010)MgO, and (111)TiN∥(111)MgO. Two kinds of processes of the hexagonal AlN epitaxial growth on the as-received TiN(001), differed by the(0001)AlN plane parallel to, and the (101̄2) plane approximately parallel to the MgO substrate surface, respectively, are identified, and within them, several cases are classified which are based on the consideration of crystallographic symmetry. Theoretical calculations based on the geometrical model that was recently proposed and applied to a number of epitaxial systems have been carried out to rationalize these observations.

    本文言語English
    ページ(範囲)1597-1603
    ページ数7
    ジャーナルJournal of Materials Research
    14
    4
    DOI
    出版ステータスPublished - 1999 4月

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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