Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c

Maki Suemitsu, Kazuhiro Chiba, Nobuo Miyamoto

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.

本文言語English
ページ(範囲)L1591-L1593
ジャーナルJapanese journal of applied physics
29
9
DOI
出版ステータスPublished - 1990 9

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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