Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (VAs-ASGa-GaAs) is proposed for the microstructure of EL2.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2003 3|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics