Interactions of impurities with dislocations: Mechanical effects

K. Sumino, I. Yonenaga

研究成果: Chapter

33 被引用数 (Scopus)

抄録

Impurity effects on the dislocation behavior and mechanical strength of elemental and III-V compound semiconductor crystals, originating in the interaction between dislocations and impurities, are reviewed on the current understanding. A variety of impurities in semiconductor crystals affect the dynamic activities of individual dislocations and, in turn, the mechanical strength of the crystal through two kinds of microscopic mechanisms; one is modification of the dislocation mobility in glide motion and the other is the immobilization of dislocations. It is shown how such impurity effects on the behavior of individual dislocations are reflected on the macroscopic mechanical properties of semiconductor crystals.

本文言語English
ホスト出版物のタイトルDefect Interaction and Clustering in Semiconductors
出版社Trans Tech Publications Ltd
ページ145-176
ページ数32
ISBN(印刷版)3908450659, 9783908450658
出版ステータスPublished - 2002 1月 1

出版物シリーズ

名前Solid State Phenomena
85-86
ISSN(印刷版)1012-0394

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学

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