TY - JOUR
T1 - Interaction of sodium atoms with stacking faults in silicon with different Fermi levels
AU - Ohno, Yutaka
AU - Morito, Haruhiko
AU - Kutsukake, Kentaro
AU - Yonenaga, Ichiro
AU - Yokoi, Tatsuya
AU - Nakamura, Atsutomo
AU - Matsunaga, Katsuyuki
N1 - Funding Information:
Acknowledgments A part of this work was supported by JSPS KAKENHI for Scientific Research (B) Grant Number JP15H03535 (2015–2018) and JST CREST Grant No. JPMJCR17J1 (2017–2023). The TEM analyses were partially supported by the Laboratory of Alpha-Ray Emitters in the Institute for Materials Research (IMR), Tohoku University, under the Inter-University Cooperative Research Program in IMR.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/6
Y1 - 2018/6
N2 - Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: It was reduced by more than 10mJ/m2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.
AB - Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: It was reduced by more than 10mJ/m2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.
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U2 - 10.7567/APEX.11.061303
DO - 10.7567/APEX.11.061303
M3 - Article
AN - SCOPUS:85047955771
SN - 1882-0778
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 061303
ER -