Interaction of phosphorus with dislocations in heavily phosphorus doped silicon

Y. Ohno, T. Shirakawa, T. Taishi, I. Yonenaga

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Effects of annealing at 1173 K, that is comparable to the typical temperatures for the fabrication of Si-based devices, on the dissociated dislocations in Czochralski-grown silicon crystals heavily doped with phosphorus atoms were determined. Dislocation segments with edge component are constricted. They climbed out of the slip plane toward the compression side, forming complete dislocation segments. The dissociation width of the rest segments is increased. These results suggest that phosphorus atoms segregate nearby dislocations and the high doping level at the dislocations lowers the formation energy of negatively charged vacancies.

本文言語English
論文番号091915
ジャーナルApplied Physics Letters
95
9
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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