The energy spectrum of hole traps is investigated in organic polymer poly(di-n-hexylsilane) by the fractional thermally stimulated luminescence (TSL) in the 5–40 K temperature range. In addition, the Raman spectrum of the polymer is studied at 300 K. For the first time, the structure on a TSL curve is observed. It is found that the obtained activation energies of traps coincide with the frequencies of Si–Si vibrations of the polymer chain active in the Raman spectra. These results have been explained within a model, by which the release of charge carriers from traps may be activated via the resonant energy transfer from Si–Si vibrations to the charge carriers. The model explains the appearance of a structure on the TSL curve.
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