Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

Tomihiro Hashizume, Seiji Heike, Mark I. Lutwyche, Satoshi Watanabe, Ken Nakajima, Toshio Nishi, Yasuo Wada

    研究成果: Article査読

    131 被引用数 (Scopus)

    抄録

    Adsorption of Ga on the hydrogen terminated Si(100)-2 x 1-H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.

    本文言語English
    ページ(範囲)L1085-L1088
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    35
    8 SUPPL. B
    DOI
    出版ステータスPublished - 1996 8 15

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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