Integration of single/double vertical-cavity devices by mask molecular beam epitaxy

Hideaki Saito, Hideo Kosaka, Yoshimasa Sugimoto, Kenichi Kasahara

研究成果: Article査読

抄録

We have developed a new mask molecular beam epitaxy (MBE) technique that allows successive selective and non-selective growth to be carried out in a chamber using a movable mask. Grown layers have high crystal quality without contamination. This technique is used to monolithically integrate vertical-cavity surface-emitting lasers and double vertical-cavity photodetectors used for optical interconnections. A low threshold current is obtained in the surface-emitting laser and a large bandwidth is obtained in the photodetector.

本文言語English
ページ(範囲)1318-1322
ページ数5
ジャーナルJournal of Crystal Growth
150
DOI
出版ステータスPublished - 1995 1 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Integration of single/double vertical-cavity devices by mask molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル