Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD.

本文言語English
ページ(範囲)435-438
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
8
1-3 SPEC. ISS.
DOI
出版ステータスPublished - 2005 2
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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