抄録
This paper describes a multi-channel modulator consisting of EAMs, an arrayed waveguide grating, and semiconductor optical amplifiers. The modulator achieves 2.5-Gb/s operation and low optical and electrical crosstalk. For a solitary high-speed 50-μm-long EAM buried with ruthenium-doped semi-insulating-InP, the extrapolated 3-dB-down electrical bandwidth is as large as 80 GHz. Small-signal E/O response with 3-dB-down electrical bandwidth of over 50 GHz is demonstrated.
本文言語 | English |
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ページ(範囲) | 820-821 |
ページ数 | 2 |
ジャーナル | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
巻 | 2 |
出版ステータス | Published - 2003 |
外部発表 | はい |
イベント | 2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States 継続期間: 2003 10月 26 → 2003 10月 30 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学