Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Satoshi Kokado, Masahiko Ichimura, Toshiyuki Onogi, Akimasa Sakuma, Reiko Arai, Jun Hayakawa, Kenchi Ito, Yoshio Suzuki

研究成果: Article

3 引用 (Scopus)

抜粋

The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.

元の言語English
ページ(範囲)3986-3988
ページ数3
ジャーナルApplied Physics Letters
79
発行部数24
DOI
出版物ステータスPublished - 2001 12 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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