Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

S. Miura, T. V.A. Nguyen, Y. Endoh, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We have studied the magnetic and electrical properties of double CoFeB-MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses tW annealed at 400 °C and evaluated tW dependence of thermal stability factor Δ, intrinsic critical current IC0 and damping constant α. It was found that spin-transfer torque efficiency (ΔIC0) values increased with decreasing tW as compared with the same MTJ size D. α measured by ferromagnetic resonance increased with an increase in tW, which is consistent with those calculated from ΔIC0. This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher ΔIC0.

本文言語English
論文番号8674769
ジャーナルIEEE Transactions on Magnetics
55
7
DOI
出版ステータスPublished - 2019 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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