The InP(100)-(2 × 4) surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy EB = 1.0 eV, is consistent with previous findings. The second and third states, located at EB = 1.8 eV and EB = 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion compared with the surface states on InAs(100)-(2 × 4) and GaAs(100)-(2 × 4). This result suggests that the elements of the InP(100)-(2 × 4) surface unit cells are more isolated from each other than they are for the InAs(100)-(2 × 4) or the GaAs(100)-(2 × 4) surfaces.
|ジャーナル||Journal of Electron Spectroscopy and Related Phenomena|
|出版ステータス||Published - 1998 3 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Physical and Theoretical Chemistry