InP MISFET's, with native oxide film interlayed between plasma anodic Al2O3 film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 μs ~ 5 × 104 s. The effective electron mobility is 2100 ~ 2600 cm2/V · s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering