InP MISFET's with Plasma Anodic Al2O3 and Interlayed Native Oxide Gate Insulators

M. Matsui, Y. Hirayama, F. Arai, T. Sugano

研究成果: Article査読

18 被引用数 (Scopus)

抄録

InP MISFET's, with native oxide film interlayed between plasma anodic Al2O3 film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 μs ~ 5 × 104 s. The effective electron mobility is 2100 ~ 2600 cm2/V · s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.

本文言語English
ページ(範囲)308-310
ページ数3
ジャーナルIEEE Electron Device Letters
4
9
DOI
出版ステータスPublished - 1983 9
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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