Enhancement-mode InP MISFET's with anodic AI2Q3/ native oxide double-layer for gate insulator are fabricated by anodization processes in electrolyte and in oxygen plasma. Such gate structure greatly improves the device performance; high effective electron mobilities of 1500–3000 cm2/V. s and marked reduction of drain current instability were simultaneously achieved. This device performance is consistent with the interface properties obtained by C-V measurements, InP MISFET inverters as well as ring oscillators are also fabricated to demonstrate the stability of the circuit at low frequency and to show the capability of the process employed.
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