InP-HEMT MMICs for passive millimeter-wave imaging sensors

M. Sato, T. Hirose, T. Ohki, T. Takahashi, K. Makiyama, N. Hara, H. Sato, K. Sawaya, K. Mizuno

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

This paper describes InP-HEMT MMICs for 94 GHz band passive millimeterwave (PMMW) imaging sensors. In order to obtain high sensitivity with a single MMIC, we developed a new structure in MMIC to suppress unwanted feedback power that causes amplifier instability. The structure is also suited for flip chip bonding (FCB). The measured sensitivity of the MMIC was over 500,000 V/W at the frequency of 94 GHz. We also developed the RF front-end of the PMMW imager by mounting the MMIC on an antenna substrate by FCB assembly. In addition, we demonstrated examples of a millimeter-wave image acquired by the PMMW imager.

本文言語English
ホスト出版物のタイトル2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOI
出版ステータスPublished - 2008 12 1
イベント2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
継続期間: 2008 5 252008 5 29

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
国/地域France
CityVersailles
Period08/5/2508/5/29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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