InN polarity determination by convergent-beam electron diffraction

Toshitsugu Mitate, Seiichiro Mizuno, Hiroko Takahata, Ryu Kakegawa, Takashi Matsuoka, Noriyuki Kuwano

研究成果: Article査読

23 被引用数 (Scopus)

抄録

To establish an accurate determination technique for the polarity of InN by convergent-beam electron diffraction (CBED), we clarified the influence of the electron incidence direction, film thickness, and the temperature factor B on CBED patterns by simulation. The electron incidence direction of [1 1- 00] and a film thinner than 50 nm were found to be preferable for easy and reliable polarity determination. Using an InN film grown on a (000 1-) GaN template on (0001) sapphire by metalorganic vapor-phase epitaxy, observation of the CBED pattern in the thin region of the film was confirmed from the simulation result. This InN film was clearly determined to have N polarity and the value of B was estimated to be less than 2.0 Å2.

本文言語English
論文番号134103
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
13
DOI
出版ステータスPublished - 2005 3 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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