抄録
To establish an accurate determination technique for the polarity of InN by convergent-beam electron diffraction (CBED), we clarified the influence of the electron incidence direction, film thickness, and the temperature factor B on CBED patterns by simulation. The electron incidence direction of [1 1- 00] and a film thinner than 50 nm were found to be preferable for easy and reliable polarity determination. Using an InN film grown on a (000 1-) GaN template on (0001) sapphire by metalorganic vapor-phase epitaxy, observation of the CBED pattern in the thin region of the film was confirmed from the simulation result. This InN film was clearly determined to have N polarity and the value of B was estimated to be less than 2.0 Å2.
| 本文言語 | English |
|---|---|
| 論文番号 | 134103 |
| ページ（範囲） | 1-3 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 86 |
| 号 | 13 |
| DOI | |
| 出版ステータス | Published - 2005 3 28 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)