Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

研究成果: Paper

抜粋

The initial stages of the thermal oxidation of Si(001) 2 × 1 surface were studied by scanning tunneling microscopy (STM). The O2 exposure at 600°C produced a random distribution of Si islands, 'dark sites', 'sequence of dots', and 'dots with dark surroundings'. The 'sequence of dots' and the 'dots with dark surroundings' seem to remain on the surface even after the successive heating. The 'dark sites', the 'sequence of dots', and the 'dots with dark surroundings' are considered to be initial forms of oxides. From the experimental results, a possible model of the 'sequence of dots' was proposed. Also in the discussion, some relations between the SiO2/Si interface and the initial forms of the thermal oxides have been suggested.

元の言語English
ページ108-110
ページ数3
DOI
出版物ステータスPublished - 1992 1 1
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8 261992 8 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
Tsukuba, Jpn
期間92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Udagawa, M., Niwa, M., & Sumita, I. (1992). Initial stages of the thermal oxidation of Si(001) 2 × 1 surface studied by scanning tunneling microscopy. 108-110. 論文発表場所 Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pa1-1