Initial stage of sputtering in silicon oxide

Takeo Hattori, Yukimoto Hisajima, Hiroyuki Saito, Toshihisa Suzuki, Hiroshi Daimon, Yoshitada Murata, Masaru Tsukada

    研究成果: Article査読

    14 被引用数 (Scopus)

    抄録

    The effect of argon ion bombardment on a silicon oxide film prepared on a Si(111) surface by dry oxidation was investigated by measuring partial yield spectra in addition to the oxygen induced Si 2p core level shift. The experimental observations can be understood such that the SiO2 network is decomposed at the initial stage of argon ion bombardment. In the following stage of bombardment, the silicon oxide films are sputter etched resulting in a decrease in the oxide film thickness.

    本文言語English
    ページ(範囲)244-246
    ページ数3
    ジャーナルApplied Physics Letters
    42
    3
    DOI
    出版ステータスPublished - 1983

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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