Initial stage of SiO2/Si interface formation on Si(111) surface

Takeo Hattori, Hiroshi Nohira, Yoshinari Tamura, Hiroki Ogawa

    研究成果: Article査読

    18 被引用数 (Scopus)

    抄録

    The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

    本文言語English
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    31
    5 B
    出版ステータスPublished - 1992

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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