Initial stage of SiO2/Si interface formation on Si(111) surface

Yoshinari Tamura, Kazuaki Ohishi, Hiroshi Nohira, Takeo Hattori

    研究成果: Paper査読

    3 被引用数 (Scopus)

    抄録

    The initial stages of SiO2/Si interface formation on n-type and p-type Si(111) surfaces treated with 40% NH4F were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the larger oxidation rate is obtained for p-type Si and the SiO2/Si interface formed on n-type Si(111) is close to atomically flat.

    本文言語English
    ページ111-113
    ページ数3
    出版ステータスPublished - 1992 12 1
    イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
    継続期間: 1992 8 261992 8 28

    Other

    OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
    CityTsukuba, Jpn
    Period92/8/2692/8/28

    ASJC Scopus subject areas

    • 工学(全般)

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