Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

Takeshi Aiba; Ken Yamauchi; Yuichi Shimizu; Naoto Tate; Masatake Katayama; Takeo Hattori

Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

Takeshi Aiba, Ken Yamauchi, Yuichi Shimizu, Naoto Tate, Masatake Katayama, Takeo Hattori

研究成果: Chapter

抄録

The initial stage of SiO₂/Si interface formation on an atomically flat hydrogen-terminated Si(100)-2 × 1 surface was studied by X-ray photoelectron spectroscopy. The following results were obtained: 1) the initial stage of interface formation does not depend on the initial surface morphology, 2) the interface layer becomes continuous at the oxide film thickness of 0.5 nm, and 3) at thicknesses greater than this the deviation from an atomically flat interface increases with the progress of oxidation, however, an abrupt compositional transition occurs.

本文言語	English
ホスト出版物のタイトル	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者	Seigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al
Place of Publication	Minato-ku, Japan
出版社	JJAP
ページ	707-711
ページ数	5
巻	34
版	2 B
出版ステータス	Published - 1995 2月
イベント	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn 継続期間: 1994 8月 23 → 1994 8月 26

Other

Other	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)
City	Yokohama, Jpn
Period	94/8/23 → 94/8/26

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. / Aiba, Takeshi; Yamauchi, Ken; Shimizu, Yuichi その他.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Seigo Tarucha; Yasuhiko Arakawa; Masao Fukuma; Kazuhito Furuya; Yoshiji Horikoshi; al et al. Vol. 34 2 B. ed. Minato-ku, Japan : JJAP, 1995. p. 707-711.

研究成果: Chapter

Aiba, T, Yamauchi, K, Shimizu, Y, Tate, N, Katayama, M & Hattori, T 1995, Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. in S Tarucha, Y Arakawa, M Fukuma, K Furuya, Y Horikoshi & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 2 B edn, vol. 34, JJAP, Minato-ku, Japan, pp. 707-711, Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94), Yokohama, Jpn, 94/8/23.

Aiba, Takeshi ; Yamauchi, Ken ; Shimizu, Yuichi その他. / Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. editor / Seigo Tarucha ; Yasuhiko Arakawa ; Masao Fukuma ; Kazuhito Furuya ; Yoshiji Horikoshi ; al et al. Vol. 34 2 B. ed. Minato-ku, Japan : JJAP, 1995. pp. 707-711

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Initial stage of oxidation of hydrogen-terminated Si(100)-2 × 1 surface

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