Initial stage growth and interface formation of Al on Si(001)2 x 1

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, S. Kono

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Initial stage growth and interface formation of Al on a Si(001)2x1 surface has been studied by core-level and valence-band photoelectron spectroscopy using synchrotron radiation for the Al coverages (ΘAl) up to ∼2 ML at room temperature (RT) and 300°C. The measured Al 2p and Si 2p spectra reveal, for the first time, the existence of interfacial reaction of Al with Si in addition to the rather well-known dimer adsorption of Al. The reaction occurs even at RT for ΘAl;≥0.5 ML, which progresses significantly by annealing at 30°C from earlier stage of adsorption. Beyond 0.5 ML, Al 2p core levels indicate formation of Al clusters at both temperatures, which is accompanied by increase of the reacted phase. This interfacial reaction explains the 1x1 phase at 300°C found by LEED and the difference in band bending between RT and 300°C above ∼0.5 ML. The evolution of the valence-band surface electronic structures with respect to ΘAl is interpreted in a consistent way to the core-level results.

本文言語English
ページ(範囲)328-336
ページ数9
ジャーナルSurface Science
365
2
DOI
出版ステータスPublished - 1996 9 20

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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