Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

J. H. Oh, K. Nakamura, K. Ono, M. Oshima, N. Hirashita, M. Niwa, A. Toriumi, A. Kakizaki

研究成果: Conference article査読

21 被引用数 (Scopus)


The oxygen adsorption processes during the initial oxidation of Si(100) have been investigated by high-resolution photoemission spectroscopy of the Si2p core levels. The variation of the Si2p intensities was measured in detail for the different sub-oxide (Si1+, Si2+, Si3+, and Si4+) components. The oxygen adsorption processes at room temperature during the initial oxidation were quantitatively analyzed by measuring the intensity ratios of each sub-oxide component as a function of the oxidation time. It is found that the Si1+ and Si2+ species are localized mostly at the first interfacial layer, while the Si3+ and Si4+ components exist in the two-dimensional islands with certain height on the initial oxidation layer, and are expanded horizontally during further oxidation. Our results suggest that the two-dimensional island nucleation occurs during the initial oxidation.

ジャーナルJournal of Electron Spectroscopy and Related Phenomena
出版ステータスPublished - 2001 3月
イベント8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA
継続期間: 2000 8月 82000 8月 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 放射線
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 分光学
  • 物理化学および理論化学


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